triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 1 dc - 12 ghz discrete hfet TGF4230-SCC key features and performance ? nominal pout of 28.5 dbm at 8.5 ghz ? nominal gain of 10.0 db at 8.5 ghz ? nominal pae of 55 % at 8.5 ghz ? 1200 m hfet ? 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in) ? bias at 8 volts, 96 ma description the triquint TGF4230-SCC is a single gate 1.2 mm discrete gaas heterostructure field effect transistor (hfet) designed for high-efficiency power applications up to 12 ghz in class a and class ab operation. bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. the TGF4230-SCC is readily assembled using automatic equipment. for an application note on the use of hfets, refer to the triquint website for the millimeter wave division. primary applications ? cellular base stations ? high dynamic-range lnas ? military and space
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 2 table i maximum ratings symbol parameter 1/ value notes v ds drain to source voltage 12 v v gs gate to source voltage range 0 to -5.0 volts p d power dissipation see thermal data t ch operating channel temperature 150 c 2/, 3 / t stg storage temperature -65 to 150 c t m mounting temperature (30 seconds) 320 c 1/ these ratings represent the maximum values for this device. stresses beyond those listed under ?maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?dc probe characteristics? and ?electrical characteristics? is not implied. exposure to maximum rated conditions for extended periods may affect device reliability. 2/ junction temperature will directly affect the device mean time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ these ratings apply to each individual fet TGF4230-SCC
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 3 TGF4230-SCC table ii dc probe characteristics (t a = 25 c, nominal) symbol parameter minimum typical maximum unit note i dss saturated drain current -- 294 -- ma 1/ g m transconductance -- 198 -- ms 1/ v p pinch-off voltage 1 1.85 3 v 2/ v bgs breakdown voltage gate-source 17 22 30 v 2/ v bgd breakdown voltage gate-drain 17 22 30 v 2/ 1/ total for two fets 2/ v p , v bgs , and v bgd are negative. table iii electrical characteristics (t a = 25 c , n om inal) bias conditions: vd = 8 v, id = 50 ma +/- 10%, @ 8.5 ghz symbol parameter typical unit pout output power 28.5 dbm gp power gain 10 db pae power added efficiency 55 % note: the recommended bias current for hfets is 80 ma/mm. for this 1.2 mm hfet iq is 96 ma.
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 4 example of dc i-v curves output power vs. input power power added efficiency vs. input power TGF4230-SCC typical performance
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 5 gain vs. input power drain current vs. input power TGF4230-SCC typical performance *
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 6 predicted channel temperature vs. base temperature at 0.51 w and 1.02 w dissipated power hfet channel temperature vs. median life TGF4230-SCC thermal information
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 7 frequency s 11 s 21 s 12 s 22 (ghz) mag ang( ) mag ang( ) mag ang( ) mag ang( ) 0.5 0.985 -29.88 8.095 161.49 0.021 72.66 0.343 -22.22 1.0 0.959 -56.20 7.297 145.18 0.038 58.80 0.328 -41.75 1.5 0.931 -77.47 6.368 131.86 0.050 47.65 0.312 -57.46 2.0 0.908 -94.02 5.512 121.22 0.057 39.12 0.301 -69.57 2.5 0.891 -106.82 4.791 112.62 0.062 32.60 0.295 -78.80 3.0 0.880 -116.82 4.202 105.49 0.065 27.55 0.294 -85.89 3.5 0.871 -124.76 3.723 99.42 0.067 23.56 0.297 -91.41 4.0 0.865 -131.19 3.330 94.11 0.068 20.34 0.302 -95.80 4.5 0.861 -136.48 3.004 89.37 0.069 17.70 0.309 -99.38 5.0 0.858 -140.92 2.732 85.06 0.069 15.51 0.319 -102.37 5.5 0.856 -144.69 2.501 81.09 0.069 13.67 0.329 -104.94 6.0 0.855 -147.94 2.304 77.39 0.068 12.12 0.340 -107.18 6.5 0.854 -150.78 2.133 73.90 0.068 10.82 0.352 -109.19 7.0 0.854 -153.29 1.984 70.59 0.067 9.72 0.364 -111.03 7.5 0.854 -155.53 1.852 67.43 0.066 8.80 0.377 -112.73 8.0 0.855 -157.54 1.736 64.40 0.065 8.05 0.390 -114.32 8.5 0.855 -159.37 1.632 61.49 0.065 7.45 0.404 -115.84 9.0 0.856 -161.04 1.539 58.67 0.064 7.00 0.417 -117.29 9.5 0.857 -162.58 1.455 55.95 0.063 6.68 0.430 -118.68 10.0 0.858 -164.01 1.378 53.30 0.061 6.49 0.444 -120.03 10.5 0.859 -165.34 1.308 50.73 0.060 6.43 0.457 -121.35 11.0 0.860 -166.58 1.244 48.23 0.059 6.51 0.470 -122.63 11.5 0.862 -167.76 1.186 45.79 0.058 6.71 0.483 -123.89 12.0 0.863 -168.87 1.131 43.41 0.057 7.05 0.496 -125.11 12.5 0.864 -169.93 1.081 41.09 0.056 7.52 0.509 -126.32 13.0 0.866 -170.94 1.034 38.83 0.055 8.12 0.521 -127.51 13.5 0.867 -171.91 0.991 36.62 0.053 8.86 0.534 -128.68 14.0 0.869 -172.84 0.950 34.46 0.052 9.74 0.546 -129.82 v ds = 8.0 v and 30% i dss at t = 25c TGF4230-SCC modeled s- parameters fet elements l g = 0.0421nh r g = 0.43 r gs = 81700 r 1 = 1.21 c gs = 1.21 pf c dg = 0.1004 pf m = 132.9 ms a = 0 r1 = 1e19 r2 = 1e19 f = 0 t = 5.49 ps r dg = 204000 r s = 0.4 l s = 0.015 nh r ds = 98.01 c ds = 0.25325 pf r d = 0.66 l d = 0.022 nh vccs parameters
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 8 TGF4230-SCC mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 9 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. note: die are shipped in gel pack unless otherwise specified. TGF4230-SCC
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